Access count of this item: 59

Files in This Item:
File Description SizeFormat 
KJ00004812191.pdf317.79 kBAdobe PDFView/Open
Title: 8. Electronic Transport in Metallic Ge:Sb at Low Temperature(Experiments,I. Three Dimensional Systems)
Authors: Ootuka, Youiti
Katsumoto, Shingo
Issue Date: 20-Jul-1983
Publisher: 物性研究刊行会
Journal title: 物性研究
Volume: 40
Issue: 4
Start page: 26
End page: 31
Abstract: The metallic impurity conduction is a typical example of the transport in the disordered metal. It shows anomalous transport at low temperature. After the developement of the perturbation theory of transport in "weakly localized region", these anomalies are interpreted to be the appearance of the effects of localization and electron-electron interaction in dirty metal. The theories explain the characteristic features of temperature and magnetic field dependence of conductivity, but quantitatively there remain some disagreements between theory and experiment. In this paper, we report the measurement of low temperature transport properties in the metallic impurity conduction of Ge:Sb, especially stressing the anisotropy of magnetoconductance.
Description: この論文は国立情報学研究所の電子図書館事業により電子化されました。
URI: http://hdl.handle.net/2433/91089
Appears in Collections:Vol.40 No.4

Show full item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.