8. Electronic Transport in Metallic Ge:Sb at Low Temperature(Experiments,I. Three Dimensional Systems)

Abstract

The metallic impurity conduction is a typical example of the transport in the disordered metal. It shows anomalous transport at low temperature. After the developement of the perturbation theory of transport in "weakly localized region", these anomalies are interpreted to be the appearance of the effects of localization and electron-electron interaction in dirty metal. The theories explain the characteristic features of temperature and magnetic field dependence of conductivity, but quantitatively there remain some disagreements between theory and experiment. In this paper, we report the measurement of low temperature transport properties in the metallic impurity conduction of Ge:Sb, especially stressing the anisotropy of magnetoconductance.