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| 書誌情報 | ファイル |
|---|---|
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-01-14) Applied Physics Letters, 80(2): 240-242 |  |
| High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition Fujihira, K; Kimoto, T; Matsunami, H (2002-03-04) Applied Physics Letters, 80(9): 1586-1588 | |
| Electrical activation of high-concentration aluminum implanted in 4H-SiC Negoro, Y; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004-11-01) Journal of Applied Physics, 96(9): 4916-4922 | |
| Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004-07-01) Journal of Applied Physics, 96(1): 224-228 | |
| Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy Danno, K; Kimoto, T; Matsunami, H (2005-03-21) Applied Physics Letters, 86(12) | |
| Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing Negoro, Y; Kimoto, T; Matsunami, H (2004-09-06) Applied Physics Letters, 85(10): 1716-1718 | |
| Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002-12-16) Applied Physics Letters, 81(25): 4772-4774 | |
| Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces Yano, H; Kimoto, T; Matsunami, H (2002-07-08) Applied Physics Letters, 81(2): 301-303 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-09) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN Okumura, H; Horita, M; Kimoto, T; Suda, J (2008) APPLIED SURFACE SCIENCE, 254(23): 7858-7860 |