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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3489419.pdf | 1.11 MB | Adobe PDF | 見る/開く |
| タイトル: | Reduction in surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water-vapor annealing |
| 著者: | Fujita, Masayuki Gelloz, Bernard Koshida, Nobuyoshi Noda, Susumu    https://orcid.org/0000-0003-4302-0549 (unconfirmed) |
| 著者名の別形: | 冨士田, 誠之 |
| キーワード: | annealing elemental semiconductors passivation photoluminescence photonic crystals silicon surface recombination |
| 発行日: | 20-Sep-2010 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 97 |
| 号: | 12 |
| 論文番号: | 121111 |
| 抄録: | We propose and demonstrate the application of high-pressure water-vapor annealing (HWA) to silicon photonic crystals for surface passivation. We find that the photoluminescence intensity from a sample treated with HWA is enhanced by a factor of ∼ 6. We confirm that this enhancement originates from a reduction in the surface-recombination velocity (SRV) by a factor of ∼ 0.4. The estimated SRV is as low as 2.1×10[3] cm/s at room temperature. These results indicate that HWA is a promising approach for efficient surface passivation in silicon photonic nanostructures. |
| 著作権等: | © 2010 American Institute of Physics |
| URI: | http://hdl.handle.net/2433/130696 |
| DOI(出版社版): | 10.1063/1.3489419 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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