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j.nimb.2014.02.042.pdf | 1.1 MB | Adobe PDF | 見る/開く |
タイトル: | Sputtering of SiN films by 540 keV C^[2+]_[60] ions observed using high-resolution Rutherford backscattering spectroscopy |
著者: | Nakajima, K. Morita, Y. Kitayama, T. Suzuki, M. Narumi, K. Saitoh, Y. Tsujimoto, M. Isoda, S. Fujii, Y. Kimura, K. |
著者名の別形: | 木村, 健二 |
キーワード: | Electronic sputtering C60 High-resolution RBS Silicon nitride |
発行日: | Aug-2014 |
出版者: | Elsevier B.V. |
誌名: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
巻: | 332 |
開始ページ: | 117 |
終了ページ: | 121 |
抄録: | Amorphous silicon nitride films deposited on Si(0 0 1) were irradiated with 540 keV C[60] ions to fluences ranging from 2.5 × 10[11] to 1 × 10[14] ions/cm2. The composition depth profiles of the irradiated samples were measured using high-resolution Rutherford backscattering spectroscopy. Both silicon and nitrogen in the film decrease rapidly with fluence. From the observed result the sputtering yields are obtained as 3900 ± 500 N atoms/ion and 1500 ± 1000 Si atoms/ion. Such large sputtering yield cannot be explained by either the elastic sputtering or the electronic sputtering, indicating that the synergy effect between the elastic sputtering and the electronic sputtering plays an important role. |
著作権等: | © 2014 Elsevier B.V. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。 This is not the published version. Please cite only the published version. |
URI: | http://hdl.handle.net/2433/188902 |
DOI(出版社版): | 10.1016/j.nimb.2014.02.042 |
出現コレクション: | 学術雑誌掲載論文等 |
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