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dc.contributor.author | Asano, Takashi | en |
dc.contributor.author | Suemitsu, Masahiro | en |
dc.contributor.author | Hashimoto, Kohei | en |
dc.contributor.author | De Zoysa, Menaka | en |
dc.contributor.author | Shibahara, Tatsuya | en |
dc.contributor.author | Tsutsumi, Tatsunori | en |
dc.contributor.author | Noda, Susumu | en |
dc.contributor.alternative | 浅野, 卓 | ja |
dc.contributor.alternative | 末光, 真大 | ja |
dc.contributor.alternative | 野田, 進 | ja |
dc.date.accessioned | 2016-12-27T04:20:34Z | - |
dc.date.available | 2016-12-27T04:20:34Z | - |
dc.date.issued | 2016-12-23 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | http://hdl.handle.net/2433/217701 | - |
dc.description | 「熱エネルギー」を太陽電池が効率よく発電できる波長の「光」に変換することに初めて成功. 京都大学プレスリリース. 2016-12-27. | ja |
dc.description.abstract | Control of the thermal emission spectra of emitters will result in improved energy utilization efficiency in a broad range of fields, including lighting, energy harvesting, and sensing. In particular, it is challenging to realize a highly selective thermal emitter in the near-infrared–to–visible range, in which unwanted thermal emission spectral components at longer wavelengths are significantly suppressed, whereas strong emission in the near-infrared–to–visible range is retained. To achieve this, we propose an emitter based on interband transitions in a nanostructured intrinsic semiconductor. The electron thermal fluctuations are first limited to the higher-frequency side of the spectrum, above the semiconductor bandgap, and are then enhanced by the photonic resonance of the structure. Theoretical calculations indicate that optimized intrinsic Si rod-array emitters with a rod radius of 105 nm can convert 59% of the input power into emission of wavelengths shorter than 1100 nm at 1400 K. It is also theoretically indicated that emitters with a rod radius of 190 nm can convert 84% of the input power into emission of <1800-nm wavelength at 1400 K. Experimentally, we fabricated a Si rod-array emitter that exhibited a high peak emissivity of 0.77 at a wavelength of 790 nm and a very low background emissivity of <0.02 to 0.05 at 1100 to 7000 nm, under operation at 1273 K. Use of a nanostructured intrinsic semiconductor that can withstand high temperatures is promising for the development of highly efficient thermal emitters operating in the near-infrared–to–visible range. | en |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Association for the Advancement of Science (AAAS) | en |
dc.rights | 2016 © The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). | en |
dc.subject | thermal emission control | en |
dc.subject | near-infrared | en |
dc.subject | visible | en |
dc.subject | energy utilization efficiency | en |
dc.subject | thermal emitter | en |
dc.subject | intrinsic semiconductor | en |
dc.subject | interband transition | en |
dc.subject | electronic resonance | en |
dc.subject | photonic resonance | en |
dc.title | Near-infrared–to–visible highly selective thermal emitters based on an intrinsic semiconductor | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.jtitle | Science Advances | en |
dc.identifier.volume | 2 | - |
dc.identifier.issue | 12 | - |
dc.relation.doi | 10.1126/sciadv.1600499 | - |
dc.textversion | publisher | - |
dc.identifier.artnum | e1600499 | - |
dc.identifier.pmid | 28028532 | - |
dc.relation.url | https://www.kyoto-u.ac.jp/ja/research-news/2016-12-27 | - |
dcterms.accessRights | open access | - |
dc.identifier.eissn | 2375-2548 | - |
出現コレクション: | 学術雑誌掲載論文等 |
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