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1.4915128.pdf | 18.31 MB | Adobe PDF | 見る/開く |
タイトル: | Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers |
著者: | Thierry-Jebali, N. Kawahara, C. Miyazawa, T. Tsuchida, H. Kimoto, T. |
著者名の別形: | 木本, 恒暢 |
キーワード: | Photoemission Photoluminescence Epitaxy Charge coupled devices Doping |
発行日: | 1-Mar-2015 |
出版者: | American Institute of Physics Inc. |
誌名: | AIP Advances |
巻: | 5 |
号: | 3 |
抄録: | This paper deals with the description and the application of an original photoluminescence (PL) imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF) identification. This technique, call "photoluminescence imaging spectroscopy" (PLIS), compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work. |
著作権等: | © 2015 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License. |
URI: | http://hdl.handle.net/2433/218243 |
DOI(出版社版): | 10.1063/1.4915128 |
出現コレクション: | 学術雑誌掲載論文等 |
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