DSpace Kyoto University
Japanese | English 

Kyoto University Research Information Repository >
Graduate School of Engineering >
Journal Articles >

Access count of this item: 7

Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/218243

Full text link:

File Description SizeFormat
1.4915128.pdf18.31 MBAdobe PDFView/Open
Title: Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers
Authors: Thierry-Jebali, N.
Kawahara, C.
Miyazawa, T.
Tsuchida, H.
Kimoto, T.
Author's alias: 木本, 恒暢
Keywords: Photoemission
Photoluminescence
Epitaxy
Charge coupled devices
Doping
Issue Date: 1-Mar-2015
Publisher: American Institute of Physics Inc.
Journal title: AIP Advances
Volume: 5
Issue: 3
Abstract: This paper deals with the description and the application of an original photoluminescence (PL) imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF) identification. This technique, call "photoluminescence imaging spectroscopy" (PLIS), compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work.
Rights: © 2015 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.
URI: http://hdl.handle.net/2433/218243
DOI(Published Version): 10.1063/1.4915128
Appears in Collections:Journal Articles


Export to RefWorks

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Powered by DSpace 3.2.0 and JAIRO Crawler-List version 1.1
All items in KURENAI are protected by original copyright, with all rights reserved, unless otherwise indicated.
Feedback