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| 書誌情報 | ファイル |
|---|---|
| Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution Izumi, T; Narukawa, Y; Okamoto, K; Kawakami, Y; Fujita, S; Nakamura, S (2000) JOURNAL OF LUMINESCENCE, 87-9: 1196-1198 | |
| Dimensionality of excitons in InGaN-based light emitting devices Kawakami, Y; Narukawa, Y; Omae, K; Fujita, S; Nakamura, S (2000) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 178(1): 331-336 | |
| Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer Omae, K; Kawakami, Y; Fujita, S; Yamada, M; Narukawa, Y; Mukai, T (2002) PHYSICAL REVIEW B, 65(7) | |
| Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order <= 0.55 Sasaki, A; Tsuchida, K; Narukawa, Y; Kawakami, Y; Fujita, S; Hsu, Y; Stringfellow, GB (2001) JOURNAL OF APPLIED PHYSICS, 89(1): 343-347 | |
| Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy Kaneta, A; Mutoh, T; Kawakami, Y; Fujita, S; Marutsuki, G; Narukawa, Y; Mukai, T (2003) APPLIED PHYSICS LETTERS, 83(17): 3462-3464 | |
| Spatial and temporal luminescence dynamics in an InxGa1-xN single quantum well probed by near-field optical microscopy Kaneta, A; Okamoto, K; Kawakami, Y; Fujita, S; Marutsuki, G; Narukawa, Y; Mukai, T (2002) APPLIED PHYSICS LETTERS, 81(23): 4353-4355 | |
| Nondegenerated pump and probe spectroscopy in InGaN-based semiconductors Omae, K; Kawakami, Y; Narukawa, Y; Watanabe, Y; Mukai, T; Fujita, S (2002) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 190(1): 93-98 | |
| In inhomogeneity and emission characteristics of InGaN Kawakami, Y; Omae, K; Kaneta, A; Okamoto, K; Narukawa, Y; Mukai, T; Fujita, S (2001) JOURNAL OF PHYSICS-CONDENSED MATTER, 13(32): 6993-7010 | |
| Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes Kawakami, Y; Narukawa, Y; Omae, K; Fujita, S; Nakamura, S (2000-10-02) APPLIED PHYSICS LETTERS, 77(14): 2151-2153 |  |
| Efficient radiative recombination from < 11(2)over-bar-2 >-oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique Nishizuka, K; Funato, M; Kawakami, Y; Fujita, S; Narukawa, Y; Mukai, T (2004-10-11) APPLIED PHYSICS LETTERS, 85(15): 3122-3124 | |