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Effects of thermal annealing of ZnO layers grown by MBE Ogata, K; Sakurai, K; Fujita, S; Fujita, S; Matsushige, K (2000) JOURNAL OF CRYSTAL GROWTH, 214: 312-315 | |
Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution Izumi, T; Narukawa, Y; Okamoto, K; Kawakami, Y; Fujita, S; Nakamura, S (2000) JOURNAL OF LUMINESCENCE, 87-9: 1196-1198 | |
Dimensionality of excitons in InGaN-based light emitting devices Kawakami, Y; Narukawa, Y; Omae, K; Fujita, S; Nakamura, S (2000) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 178(1): 331-336 | |
Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnSxSe1-x single quantum well structures Yamaguchi, S; Kurusu, H; Kawakami, Y; Fujita, S; Fujita, S (2000) PHYSICAL REVIEW B, 61(15): 10303-10313 | |
Integration of GaN with Si using a AuGe-mediated wafer bonding technique Funato, M; Fujita, S; Fujita, S (2000) APPLIED PHYSICS LETTERS, 77(24): 3959-3961 | |
Time-space-resolved photoluminescence from (Zn,Cd)Se-based quantum structures Okamoto, K; Ko, HC; Kawakami, Y; Fujita, S (2000) JOURNAL OF CRYSTAL GROWTH, 214: 639-645 | |
Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures Funato, M; Fujita, S; Fujita, S (2000) JOURNAL OF CRYSTAL GROWTH, 214: 590-594 | |
Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes Kawakami, Y; Narukawa, Y; Omae, K; Fujita, S; Nakamura, S (2000-10-02) APPLIED PHYSICS LETTERS, 77(14): 2151-2153 | |
Six-bilayer periodic structures in GaN grown on GaAs(001) Funato, M; Ishido, T; Fujita, S; Fujita, S (2000-01-17) APPLIED PHYSICS LETTERS, 76(3): 330-332 | |
Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnSxSe1-x single quantum well structures Yamaguchi, S; Kurusu, H; Kawakami, Y; Fujita, S; Fujita, S (2000-04-15) PHYSICAL REVIEW B, 61(15): 10303-10313 |
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