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書誌情報ファイル
Effects of thermal annealing of ZnO layers grown by MBE
  Ogata, K; Sakurai, K; Fujita, S; Fujita, S; Matsushige, K (2000)
  JOURNAL OF CRYSTAL GROWTH, 214: 312-315
Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution
  Izumi, T; Narukawa, Y; Okamoto, K; Kawakami, Y; Fujita, S; Nakamura, S (2000)
  JOURNAL OF LUMINESCENCE, 87-9: 1196-1198
Dimensionality of excitons in InGaN-based light emitting devices
  Kawakami, Y; Narukawa, Y; Omae, K; Fujita, S; Nakamura, S (2000)
  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 178(1): 331-336
Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnSxSe1-x single quantum well structures
  Yamaguchi, S; Kurusu, H; Kawakami, Y; Fujita, S; Fujita, S (2000)
  PHYSICAL REVIEW B, 61(15): 10303-10313
Integration of GaN with Si using a AuGe-mediated wafer bonding technique
  Funato, M; Fujita, S; Fujita, S (2000)
  APPLIED PHYSICS LETTERS, 77(24): 3959-3961
Time-space-resolved photoluminescence from (Zn,Cd)Se-based quantum structures
  Okamoto, K; Ko, HC; Kawakami, Y; Fujita, S (2000)
  JOURNAL OF CRYSTAL GROWTH, 214: 639-645
Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures
  Funato, M; Fujita, S; Fujita, S (2000)
  JOURNAL OF CRYSTAL GROWTH, 214: 590-594
Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes
  Kawakami, Y; Narukawa, Y; Omae, K; Fujita, S; Nakamura, S (2000-10-02)
  APPLIED PHYSICS LETTERS, 77(14): 2151-2153
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Six-bilayer periodic structures in GaN grown on GaAs(001)
  Funato, M; Ishido, T; Fujita, S; Fujita, S (2000-01-17)
  APPLIED PHYSICS LETTERS, 76(3): 330-332
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Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnSxSe1-x single quantum well structures
  Yamaguchi, S; Kurusu, H; Kawakami, Y; Fujita, S; Fujita, S (2000-04-15)
  PHYSICAL REVIEW B, 61(15): 10303-10313
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