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Title: Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices
Authors: Funaki, Tsuyoshi  KAKEN_id  orcid https://orcid.org/0000-0001-8776-5118 (unconfirmed)
Phankong, Nathabhat
Kimoto, Tsunenobu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Hikihara, Takashi  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-0029-4358 (unconfirmed)
Keywords: C-V characteristics
high-voltage power device
terminal capacitance
voltage dependency
Issue Date: May-2009
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Journal title: IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume: 24
Issue: 5-6
Start page: 1486
End page: 1493
Abstract: The switching behavior of semiconductor devices responds to charge/discharge phenomenon of terminal capacitance in the device. The differential capacitance in a semiconductor device varies with the applied voltage in accordance with the depleted region thickness. This study develops a C - V characterization system for high-voltage power transistors (e.g., MOSFET, insulated gate bipolar transistor, and JFET), which realizes the selective measurement of a specified capacitance from among several capacitances integrated in one device. Three capacitances between terminals are evaluated to specify device characteristics-the capacitance for gate-source, gate-drain, and drain-source. The input, output, and reverse transfer capacitance are also evaluated to assess the switching behavior of the power transistor in the circuit. Thus, this paper discusses the five specifications of a C -V characterization system and its measurement results. Moreover, the developed C -V characterization system enables measurement of the transistor capacitances from its blocking condition to the conducting condition with a varying gate bias voltage. The measured C -V characteristics show intricate changes in the low-bias-voltage region, which reflect the device structure. The monotonic capacitance change in the high-voltage region is attributable to the expansion of the depletion region in the drift region. These results help to understand the dynamic behavior of high-power devices during switching operation.
Rights: © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
URI: http://hdl.handle.net/2433/109805
DOI(Published Version): 10.1109/TPEL.2009.2016566
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