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dc.contributor.author | Bardoux, R. | en |
dc.contributor.author | Kaneta, A. | en |
dc.contributor.author | Funato, M. | en |
dc.contributor.author | Kawakami, Y. | en |
dc.contributor.author | Kikuchi, A. | en |
dc.contributor.author | Kishino, K. | en |
dc.date.accessioned | 2010-05-06T05:22:00Z | - |
dc.date.available | 2010-05-06T05:22:00Z | - |
dc.date.issued | 2009-04 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/2433/109849 | - |
dc.description.abstract | We report microphotoluminescence spectroscopy performed on individual and ensemble InGaN/GaN quantum disks (Q-disks). The typical spectrum of a single Q-disk exhibited the contribution of localization centers (LCs) formed in the InGaN active layer of the Q-disks, characterized by sharp lines appearing on the low energy side of the spectra. In addition, a broader emission peak identified as the luminescence of the quasi-two-dimensional (2D) InGaN active layer surrounding the LCs appears systematically at higher energy. Time-resolved photoluminescence experiment performed on single Q-disks exhibited the excitonic transfer, from the 2D InGaN active layer to LCs, at the submicroscopic scale. Excitation power dependence studies and linear polarization analysis allowed us to identify a biexciton complex confined in a LC in a single Q-disk with a surprising positive binding energy of 13 meV. The absence of screening effect by increasing the excitation power density and the fast excitonic radiative lifetime of a few hundred picoseconds that we measured on several individual Q-disks indicate that the absence of internal electric field in the structure can explain the observed positive biexciton binding energy. | en |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Physical Society | en |
dc.rights | © 2009 The American Physical Society | en |
dc.subject | biexcitons | en |
dc.subject | binding energy | en |
dc.subject | gallium compounds | en |
dc.subject | III-V semiconductors | en |
dc.subject | indium compounds | en |
dc.subject | photoluminescence | en |
dc.subject | radiative lifetimes | en |
dc.subject | semiconductor quantum dots | en |
dc.subject | time resolved spectra | en |
dc.subject | wide band gap semiconductors | en |
dc.title | Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.ncid | AA11187113 | - |
dc.identifier.jtitle | PHYSICAL REVIEW B | en |
dc.identifier.volume | 79 | - |
dc.identifier.issue | 15 | - |
dc.relation.doi | 10.1103/PhysRevB.79.155307 | - |
dc.textversion | publisher | - |
dc.identifier.artnum | 155307 | - |
dc.relation.url | http://link.aps.org/doi/10.1103/PhysRevB.79.155307 | - |
dcterms.accessRights | open access | - |
出現コレクション: | 学術雑誌掲載論文等 |
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