Downloads: 661

Files in This Item:
File Description SizeFormat 
1.3159901.pdf649.38 kBAdobe PDFView/Open
Title: Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC
Authors: Kawahara, Koutarou
Alfieri, Giovanni
Kimoto, Tsunenobu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Keywords: aluminium
annealing
deep level transient spectroscopy
deep levels
energy gap
high-temperature effects
ion implantation
nitrogen
phosphorus
semiconductor growth
silicon compounds
wide band gap semiconductors
Issue Date: Jul-2009
Publisher: American Institute of Physics
Journal title: JOURNAL OF APPLIED PHYSICS
Volume: 106
Issue: 1
Thesis number: 013719
Abstract: The authors investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by low-dose N+, P+, and Al+ implantation, by deep level transient spectroscopy (DLTS). Ne+-implanted samples have been also prepared to investigate the pure implantation damage. In the n-type as-grown material, the Z1/2 (EC−0.63 eV) and EH6/7 (EC−1.6 eV) centers are dominant deep levels. At least, seven peaks (IN1, IN3–IN6, IN8, and IN9) have emerged by implantation and annealing at 1000 °C in the DLTS spectra from all n-type samples, irrespective of the implanted species. After high-temperature annealing at 1700 °C, however, most DLTS peaks disappeared, and two peaks, IN3 and IN9, which may be assigned to Z1/2 and EH6/7, respectively, survive with a high concentration over the implanted atom concentration. In the p-type as-grown material, the D (EV+0.40 eV) and HK4 (EV+1.4 eV) centers are dominant. Two peaks (IP1 and IP3) have emerged by implantation and annealing at 1000 °C, and four traps IP2 (EV+0.39 eV), IP4 (EV+0.72 eV), IP7 (EV+1.3 eV), and IP8 (EV+1.4 eV) are dominant after annealing at 1700 °C in all p-type samples. The IP2 and IP8 may be assigned to the HS1 and HK4 centers, respectively. The depth analyses have revealed that the major deep levels are generated in the much deeper region than the implant profile.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS 106, 013719 (2009) and may be found at http://link.aip.org/link/JAPIAU/v106/i1/p013719/s1
URI: http://hdl.handle.net/2433/109895
DOI(Published Version): 10.1063/1.3159901
Related Link: http://link.aip.org/link/JAPIAU/v106/i1/p013719/s1
Appears in Collections:Journal Articles

Show full item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.