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dc.contributor.authorEriguchi, Kojien
dc.contributor.authorWei, Zhiqiangen
dc.contributor.authorTakagi, Takeshien
dc.contributor.authorOhta, Hiroakien
dc.contributor.authorOno, Kouichien
dc.contributor.alternative江利口, 浩二ja
dc.date.accessioned2011-02-21T04:34:34Z-
dc.date.available2011-02-21T04:34:34Z-
dc.date.issued2009-01-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/137216-
dc.description.abstractConstant voltage stress (CVS) was applied to Fe–O films prepared by a sputtering process to investigate a stress-induced resistance increase leading to a fundamental mechanism for switching behaviors. Under the CVS, an abrupt resistance increase was found for both stress polarities. A conduction mechanism after the resistance increase exhibited non-Ohmic transport. The time-to-resistance increase (tr) under the CVS was revealed to strongly depend on stress voltage as well as the polarity. From a polarity-dependent resistance increase determined by a time-zero measurement, the voltage and polarity-dependent tr were discussed on the basis of field- and structure-enhanced thermochemical reaction mechanisms.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rights© 2009 American Institute of Physicsen
dc.subjectelectrical conductivityen
dc.subjectiron compoundsen
dc.subjectsputter depositionen
dc.subjectswitchingen
dc.subjectthermomechanical treatmenten
dc.subjectthin filmsen
dc.titleField and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress methoden
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleApplied Physics Lettersen
dc.identifier.volume94-
dc.identifier.issue1-
dc.relation.doi10.1063/1.3064127-
dc.textversionpublisher-
dc.identifier.artnum013507-
dcterms.accessRightsopen access-
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