The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC

Abstract

We report on the electrical characterization, by means of deep level transient spectroscopy, of electron-irradiated Al-doped 6H-SiC epilayers. Samples were irradiated with either 116 keV, in order to displace only carbon atoms, or 400 keV. Seven deep traps, in the 0.1–1.6 eV range above the valence band, were found. The thermal stability of the detected levels was analyzed by performing an isochronal annealing series in the 100–1800 °C temperature range and the atomic structure of most of the detected traps was found to be related to C-displacement.