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dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.authorNanen, Yuichiroen
dc.contributor.authorHayashi, Toshihikoen
dc.contributor.authorSuda, Junen
dc.date.accessioned2011-09-13T00:29:04Z-
dc.date.available2011-09-13T00:29:04Z-
dc.date.issued2010-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://hdl.handle.net/2433/146881-
dc.language.isoeng-
dc.publisherJAPAN SOC APPLIED PHYSICSen
dc.titleEnhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleAPPLIED PHYSICS EXPRESSen
dc.identifier.volume3-
dc.identifier.issue12-
dc.relation.doi10.1143/APEX.3.121201-
dc.textversionnone-
dc.identifier.artnum121201-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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