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dc.contributor.authorMiyake, Hirokien
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.authorSuda, Junen
dc.date.accessioned2011-09-13T00:29:05Z-
dc.date.available2011-09-13T00:29:05Z-
dc.date.issued2010-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/2433/146883-
dc.language.isoeng-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen
dc.subjectAluminum gallium nitride (AlGaN)en
dc.subjectcommon-emitter modeen
dc.subjectcurrent gainen
dc.subjectheterojunction bipolar transistor (HBT)en
dc.subjectsilicon carbide (SiC)en
dc.titleDemonstration of Common-Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistorsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEEE ELECTRON DEVICE LETTERSen
dc.identifier.volume31-
dc.identifier.issue9-
dc.identifier.spage942-
dc.identifier.epage944-
dc.relation.doi10.1109/LED.2010.2052012-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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