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    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/146890
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dc.contributor.authorFeng, Ganen
dc.contributor.authorSuda, Junen
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2011-09-13T00:29:12Z-
dc.date.available2011-09-13T00:29:12Z-
dc.date.issued2010-
dc.identifier.issn0361-5235-
dc.identifier.urihttp://hdl.handle.net/2433/146890-
dc.language.isoeng-
dc.publisherSPRINGERen
dc.subject4H-SiCen
dc.subjectstacking faultsen
dc.subjectmicro-PL mappingen
dc.titleSources of Epitaxial Growth-Induced Stacking Faults in 4H-SiCen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF ELECTRONIC MATERIALSen
dc.identifier.volume39-
dc.identifier.issue8-
dc.identifier.spage1166-
dc.identifier.epage1169-
dc.relation.doi10.1007/s11664-010-1192-6-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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