Piezoelectric Pb(Zr0.52Ti0.48)O-3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

Abstract

The combination of piezoelectric materials and single crystal diamond offers the opportunity for the development of multifunctional micromachined devices under extreme conditions. In this work, the authors report the structural, electrical, optical, and dielectric properties of Pb(Zr0.52, Ti0.48)O3 (PZT) thin films integrated on single crystal diamond (100) substrates. The corresponding field effect transistor based on the metal-piezoelectric-insulator-semiconductor (MPIS) structure was fabricated on a homoepitaxial p-type diamond layer grown on a type-Ib diamond substrate. Different intermediate layers were deposited on single diamond substrates prior to the PZT films growth in order to achieve the best polarization properties. It was observed that the utilization of an Al2O3 buffer layer followed by a SrTiO3 seed layer favored the formation of a single perovskite PZT phase. Transmission electron diffraction patterns revealed that the PZT films included an initial layer at the SrTiO3/PZT interface followed by a well crystallized layer. The PZT film grown on SrTiO3/Al2O3/diamond exhibited much better in-plane polarization than that of the PZT film on Al2O3/diamond. The photoresponse behavior revealed that carriers trapping effect was trivial in the PZT film. The channel electrical conductivity of the MPIS field effect transistor was successfully modulated by the gate bias.