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dc.contributor.authorKawahara, Koutarouen
dc.contributor.authorSuda, Junen
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.alternative川原, 洸太朗ja
dc.date.accessioned2012-05-08T01:27:45Z-
dc.date.available2012-05-08T01:27:45Z-
dc.date.issued2012-03-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/155410-
dc.description.abstractTwo trap-reduction processes, thermal oxidation and C+ implantation followed by Ar annealing, have been discovered, being effective ways for reducing the Z[1/2] center (EC – 0.67 eV), which is a lifetime killer in n-type 4H-SiC. In this study, it is shown that new deep levels are generated by the trap-reduction processes in parallel with the reduction of the Z[1/2] center. A comparison of defect behaviors (reduction, generation, and change of the depth profile) for the two trap-reduction processes shows that the reduction of deep levels by thermal oxidation can be explained by an interstitial diffusion model. Prediction of the defect distributions after oxidation was achieved by a numerical calculation based on a diffusion equation, in which interstitials generated at the SiO2/SiC interface diffuse to the SiC bulk and occupy vacancies related to the origin of the Z[1/2] center. The prediction based on the proposed analytical model is mostly valid for SiC after oxidation at any temperature, for any oxidation time, and any initial Z[1/2]-concentration. Based on the results, the authors experimentally achieved the elimination of the Z[1/2] center to a depth of about 90 μm in the sample with a relatively high initial-Z[1/2]-concentration of 10[13] cm[−3] by thermal oxidation at 1400 °C for 16.5 h. Furthermore, prediction of carrier lifetimes in SiC from the Z[1/2] profiles was realized through calculation based on a diffusion equation, which considers excited-carrier diffusion and recombination in the epilayer, in the substrate, and at the surface.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rights© 2012 American Institute of Physicsen
dc.subjectannealingen
dc.subjectcarbonen
dc.subjectcarrier lifetimeen
dc.subjectdeep levelsen
dc.subjectdiffusionen
dc.subjectinterstitialsen
dc.subjectoxidationen
dc.subjectsemiconductor epitaxial layersen
dc.subjectsilicon compoundsen
dc.subjectwide band gap semiconductorsen
dc.titleAnalytical model for reduction of deep levels in SiC by thermal oxidationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00693547-
dc.identifier.jtitleJournal of Applied Physicsen
dc.identifier.volume111-
dc.identifier.issue5-
dc.relation.doi10.1063/1.3692766-
dc.textversionpublisher-
dc.identifier.artnum053710-
dcterms.accessRightsopen access-
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