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j.cplett.2012.04.058.pdf | 1.08 MB | Adobe PDF | 見る/開く |
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DCフィールド | 値 | 言語 |
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dc.contributor.author | Yoshida, Hiroyuki | en |
dc.contributor.alternative | 吉田, 弘幸 | ja |
dc.date.accessioned | 2012-05-28T00:45:35Z | - |
dc.date.available | 2012-05-28T00:45:35Z | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 0009-2614 | - |
dc.identifier.uri | http://hdl.handle.net/2433/155958 | - |
dc.description.abstract | In previous inverse photoemission spectroscopy (IPES) experiments, either X-ray (hv > 1 keV) or vacuum ultraviolet (hv ≈ 10 eV) photons were detected following the injection of electrons with energies of 10 - 1000 eV into solid materials. Here, we demonstrate IPES in the near-ultraviolet range (hv < 5 eV) using electrons with kinetic energies less than 4 eV. The energy resolution of the instrument is attained to be 0.27 eV. From the spectra of copper phthalocyanine films, it is found that damage to the organic sample is significantly reduced, demonstrating that this method is especially suitable for organic semiconducting materials. | en |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | en |
dc.rights | © 2012 Elsevier B.V. | en |
dc.rights | この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。 | ja |
dc.rights | This is not the published version. Please cite only the published version. | en |
dc.subject | inverse photoemission spectroscopy | en |
dc.subject | unoccupied state | en |
dc.subject | electron affinity | en |
dc.subject | organic semiconductor | en |
dc.subject | radiation damage | en |
dc.title | Near-ultraviolet inverse photoemission spectroscopy using ultra-low energy electrons | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.ncid | AA11523800 | - |
dc.identifier.jtitle | Chemical Physics Letters | en |
dc.relation.doi | 10.1016/j.cplett.2012.04.058 | - |
dc.textversion | author | - |
dcterms.accessRights | open access | - |
出現コレクション: | 学術雑誌掲載論文等 |
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