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タイトル: | Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation |
著者: | Tayagaki, Takeshi Usami, Noritaka Pan, Wugen Hoshi, Yusuke Ooi, Kazufumi Kanemitsu, Yoshihiko https://orcid.org/0000-0002-0788-131X (unconfirmed) |
著者名の別形: | 太野垣, 健 金光, 義彦 |
キーワード: | Auger effect elemental semiconductors energy gap germanium photoconductivity photoexcitation semiconductor quantum dots silicon solar cells |
発行日: | 27-Sep-2012 |
出版者: | American Institute of Physics |
誌名: | Applied Physics Letters |
巻: | 101 |
号: | 13 |
論文番号: | 133905 |
抄録: | We report studies of the carrier extraction mechanism in Si solar cells with Ge quantum dots (QDs), which enable the optical absorption of photons with energies below the band gap of the host. Photocurrent measurements revealed that the photocurrent in the QD solar cells increased superlinearly with increasing excitation intensity under strong photoexcitation, which differed greatly from the behavior of Si solar cells without Ge QDs. This nonlinear photocurrent generation indicates that the carrier extraction efficiency from QDs is enhanced under strong photoexcitation by nonlinear carrier extraction processes, such as two-step photon absorption and hot carrier generation via Auger recombination. |
著作権等: | © 2012 American Institute of Physics |
URI: | http://hdl.handle.net/2433/159450 |
DOI(出版社版): | 10.1063/1.4756895 |
出現コレクション: | 学術雑誌掲載論文等 |
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