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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3699269.pdf | 641.3 kB | Adobe PDF | 見る/開く |
| タイトル: | Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC |
| 著者: | Yan, F. Devaty, R. P. Choyke, W. J. Gali, A. Kimoto, T.    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Ohshima, T. Pensl, G. |
| キーワード: | ab initio calculations anharmonic lattice modes antisite defects electron beam effects helium hydrogen ion implantation Morse potential photoluminescence potential energy surfaces semiconductor epitaxial layers silicon compounds wide band gap semiconductors |
| 発行日: | Mar-2012 |
| 出版者: | American Institute of Physics |
| 誌名: | APPLIED PHYSICS LETTERS |
| 巻: | 100 |
| 号: | 13 |
| 論文番号: | 132107 |
| 抄録: | Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1%. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity. |
| 著作権等: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 100, 132107 (2012) and may be found at http://link.aip.org/link/?apl/100/132107 |
| URI: | http://hdl.handle.net/2433/160623 |
| DOI(出版社版): | 10.1063/1.3699269 |
| 関連リンク: | http://link.aip.org/link/?apl/100/132107 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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