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dc.contributor.authorAlfieri, G.en
dc.contributor.authorKimoto, T.en
dc.date.accessioned2012-11-02T06:06:25Z-
dc.date.available2012-11-02T06:06:25Z-
dc.date.issued2011-03-21-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/160626-
dc.description.abstractThe structural and electronic properties of SiC nanocones (SiCNCs), as a function of the disclination angle and electric field intensity and orientation, are investigated by means of ab initio calculations. Phonon analysis revealed that SiCNCs with only three disclination angles are allowed and, among these, the band gap of only one SiCNC is affected by a transverse electric field. An interpretation of these findings, from a group theoretical point of view, is also given.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 98, 123102 (2011) and may be found at http://link.aip.org/link/?apl/98/123102en
dc.subjectab initio calculationsen
dc.subjectdensity functional theoryen
dc.subjectelectronic structureen
dc.subjectenergy gapen
dc.subjectnanostructured materialsen
dc.subjectsilicon compoundsen
dc.titleStructural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerationsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleAPPLIED PHYSICS LETTERSen
dc.identifier.volume98-
dc.identifier.issue12-
dc.relation.doi10.1063/1.3567535-
dc.textversionpublisher-
dc.identifier.artnum123102-
dc.relation.urlhttp://link.aip.org/link/?apl/98/123102-
dcterms.accessRightsopen access-
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