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dc.contributor.authorOskooi, Ardavanen
dc.contributor.authorFavuzzi, Pedro A.en
dc.contributor.authorTanaka, Yoshinorien
dc.contributor.authorShigeta, Hiroakien
dc.contributor.authorKawakami, Yoichien
dc.contributor.authorNoda, Susumuen
dc.date.accessioned2012-11-02T06:06:30Z-
dc.date.available2012-11-02T06:06:30Z-
dc.date.issued2012-03-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/160629-
dc.description.abstractWe present a general framework for the design of thin-film photovoltaics based on a partially disordered photonic crystal that has both enhanced absorption for light trapping and reduced sensitivity to the angle and polarization of incident radiation. The absorption characteristics of different lattice structures are investigated as an initial periodic structure is gradually perturbed. We find that an optimal amount of disorder controllably introduced into a multi-lattice photonic crystal causes the characteristic narrow-band, resonant peaks to be broadened resulting in a device with enhanced and robust performance ideal for typical operating conditions of photovoltaic applications.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 100, 181110 (2012) and may be found at http://link.aip.org/link/?apl/100/181110en
dc.subjectelemental semiconductorsen
dc.subjectinfrared spectraen
dc.subjectphotonic crystalsen
dc.subjectphotovoltaic effectsen
dc.subjectsemiconductor thin filmsen
dc.subjectsiliconen
dc.subjectvisible spectraen
dc.titlePartially disordered photonic-crystal thin films for enhanced and robust photovoltaicsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleAPPLIED PHYSICS LETTERSen
dc.identifier.volume100-
dc.identifier.issue18-
dc.relation.doi10.1063/1.4711144-
dc.textversionpublisher-
dc.identifier.artnum181110-
dc.relation.urlhttp://link.aip.org/link/?apl/100/181110-
dcterms.accessRightsopen access-
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