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dc.contributor.authorZippelius, Bernden
dc.contributor.authorSuda, Junen
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2012-11-02T06:06:40Z-
dc.date.available2012-11-02T06:06:40Z-
dc.date.issued2012-02-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/160636-
dc.description.abstractIn this paper, the impact of high-temperature annealing of 4H silicon carbide (SiC) on the formation of intrinsic defects, such as Z_[1/2] and EH_[6/7], and on carrier lifetimes was studied. Four nitrogen-doped epitaxial layers with various initial concentrations of the Z_[1/2]- and EH_[6/7]-centers (10^[11]-10^[14]cm^[-3]) were investigated by means of deep level transient spectroscopy and microwave photoconductance decay. It turned out that the high-temperature annealing leads to a monotone increase of the Z_[1/2]- and EH_[6/7]-concentration starting at temperatures between 1600℃ and 1750℃, depending on the initial defect concentration. In the case of samples with high initial defect concentration (10^[14]cm^[-3]) a distinct decrease in Z_[1/2]- and EH_[6/7]-concentration in the temperature range from 1600℃ to 1750℃ was observed, being consistent with previous reports. For higher annealing temperatures (Tanneal ≥ 1750 ∘C), the defect concentration is independent of the samples' initial values. As a consequence, beside the growth conditions, such as C/Si ratio, the thermal post-growth processing has a severe impact on carrier lifetimes, which are strongly reduced for samples annealed at high temperatures.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS 111, 033515 (2012) and may be found at http://link.aip.org/link/?jap/111/033515en
dc.subjectannealingen
dc.subjectcarrier lifetimeen
dc.subjectcrystal defectsen
dc.subjectsemiconductor epitaxial layersen
dc.subjectsilicon compoundsen
dc.subjectwide band gap semiconductorsen
dc.titleHigh temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetimeen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00693547-
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSen
dc.identifier.volume111-
dc.identifier.issue3-
dc.relation.doi10.1063/1.3681806-
dc.textversionpublisher-
dc.identifier.artnum033515-
dc.relation.urlhttp://link.aip.org/link/?jap/111/033515-
dcterms.accessRightsopen access-
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