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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3598068.pdf | 1.94 MB | Adobe PDF | 見る/開く |
| タイトル: | Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn+ ions |
| 著者: | Dang, Giang T. Kawaharamura, Toshiyuki Nitta, Noriko Hirao, Takashi Yoshiie, Toshimasa Taniwaki, Masafumi |
| キーワード: | atomic force microscopy crystal growth from solution II-VI semiconductors ion implantation photoluminescence spectral line shift surface morphology surface roughness tin wide band gap semiconductors X-ray diffraction zinc compounds |
| 発行日: | Jun-2011 |
| 出版者: | American Institute of Physics |
| 誌名: | JOURNAL OF APPLIED PHYSICS |
| 巻: | 109 |
| 号: | 12 |
| 論文番号: | 123516 |
| 抄録: | Hydrothermal ZnO wafers implanted at room temperature with 60 keV Sn^+ ions are examined by means of photoluminescence (PL), atomic force spectroscopy (AFM), and X-ray diffractometry techniques. The PL intensity significantly decreases in the wafers implanted to doses of 4.1 × 10^[13] ions/cm^2 and higher. The AFM measurements indicate that surface roughness variation is not the cause of the significant decrease in PL intensity. Furthermore, the PL deep level (DL) band peak blueshifts after illuminating the implanted samples with the He-Cd laser 325 nm line; meanwhile, the DL band intensity first increases and then decreases with illumination time. These abnormal behaviors of the DL band are discussed. |
| 著作権等: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS 109, 123516 (2011) and may be found at http://link.aip.org/link/?jap/109/123516 |
| URI: | http://hdl.handle.net/2433/160650 |
| DOI(出版社版): | 10.1063/1.3598068 |
| 関連リンク: | http://link.aip.org/link/?jap/109/123516 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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