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dc.contributor.authorHattori, Masashien
dc.contributor.authorNoda, Keien
dc.contributor.authorNishi, Tatsuyaen
dc.contributor.authorKobayashi, Keien
dc.contributor.authorYamada, Hirofumien
dc.contributor.authorMatsushige, Kazumien
dc.contributor.alternative野田, 啓ja
dc.date.accessioned2013-03-05T04:31:39Z-
dc.date.available2013-03-05T04:31:39Z-
dc.date.issued2013-01-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/171148-
dc.description.abstractElectrical transport in anodized single titania nanotube (TNT) free from any structural effects of titania nanotube array (TNA) was investigated. An anodized TNA was disassembled into single TNTs with two-step anodization technique. Then, single TNT bridges between gold electrodes with a gap of 500 nm were prepared by dielectrophoretic alignment. Quantitative assessment of electron mobility inside single anatase and rutile TNT was carried out by 2-probe current-voltage measurement and analysis based on a metal-semiconductor-metal circuit model with Schottky barriers. Our approach to intrinsic electrical transport of single nanotube is quite effective for understanding the electronic and optical properties of TNA.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rights© 2013 American Institute of Physicsen
dc.subjectanodisationen
dc.subjectelectrodesen
dc.subjectelectron mobilityen
dc.subjectelectrophoresisen
dc.subjectmetal-semiconductor-metal structuresen
dc.subjectnanotubesen
dc.subjectSchottky barriersen
dc.subjecttitanium compoundsen
dc.subjectwide band gap semiconductorsen
dc.titleInvestigation of electrical transport in anodized single TiO2 nanotubesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleApplied Physics Lettersen
dc.identifier.volume102-
dc.identifier.issue4-
dc.relation.doi10.1063/1.4789763-
dc.textversionpublisher-
dc.identifier.artnum043105-
dcterms.accessRightsopen access-
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