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dc.contributor.authorFujita, Shizuoen
dc.contributor.alternative藤田, 静雄ja
dc.date.accessioned2016-12-27T02:22:26Z-
dc.date.available2016-12-27T02:22:26Z-
dc.date.issued2015-02-04-
dc.identifier.issn1347-4065-
dc.identifier.urihttp://hdl.handle.net/2433/217690-
dc.description.abstractWide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase. What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their "full bloom".en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherIOP Publishingen
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication in 'Japanese Journal of Applied Physics'. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.7567/JJAP.54.030101.en
dc.rightsこの論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。ja
dc.rightsThis is not the published version. Please cite only the published version.en
dc.titleWide-bandgap semiconductor materials: For their full bloomen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJapanese Journal of Applied Physicsen
dc.identifier.volume54-
dc.identifier.issue3-
dc.relation.doi10.7567/JJAP.54.030101-
dc.textversionauthor-
dc.identifier.artnum030101-
dcterms.accessRightsopen access-
datacite.date.available2016-02-04-
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