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dc.contributor.author | Shrestha, Sumeet | en |
dc.contributor.author | Kawahito, Shoji | en |
dc.contributor.author | Kamehama, Hiroki | en |
dc.contributor.author | Nakanishi, Syunta | en |
dc.contributor.author | Yasutomi, Keita | en |
dc.contributor.author | Kagawa, Keiichiro | en |
dc.contributor.author | Teranishi, Nobukazu | en |
dc.contributor.author | Takeda, Ayaki | en |
dc.contributor.author | Tsuru, Takeshi | en |
dc.contributor.author | Kurachi, Ikuo | en |
dc.contributor.author | Arai, Yasuo | en |
dc.contributor.alternative | 鶴, 剛 | ja |
dc.date.accessioned | 2018-09-06T04:52:45Z | - |
dc.date.available | 2018-09-06T04:52:45Z | - |
dc.date.issued | 2018-6-1 | - |
dc.identifier.issn | 1424-8220 | - |
dc.identifier.uri | http://hdl.handle.net/2433/234222 | - |
dc.description.abstract | In this paper, we report on the development of a monolithic active pixel sensor for X-ray imaging using 0.2 µm fully depleted silicon-on-insulator (SOI)-based technology to support next generation astronomical satellite missions. Detail regarding low-noise dual-gain SOI based pixels with a charge sensitive amplifier and pinned depleted diode sensor structure is presented. The proposed multi-well sensor structure underneath the fully-depleted SOI allows the design of a detector with low node capacitance and high charge collection efficiency. Configurations for achieving very high charge-to-voltage conversion gain of 52 µV/e⁻ and 187 µV/e⁻ are demonstrated. Furthermore, in-pixel dual gain selection is used for low-noise and wide dynamic range X-ray energy detection. A technique to improve the noise performance by removing correlated system noise leads to an improvement in the spectroscopic performance of the measured X-ray energy. Taken together, the implemented chip has low dark current (44.8 pA/cm² at −30 °C), improved noise performance (8.5 e⁻ rms for high gain and 11.7 e⁻ rms for low gain), and better energy resolution of 2.89% (171 eV FWHM) at 5.9 keV using ⁵⁵Fe and 1.67% (234 eV FWHM) at 13.95 keV using ²⁴¹Am. | en |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | MDPI AG | en |
dc.rights | This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0) | en |
dc.subject | active pixel sensor | en |
dc.subject | charge sensitive amplifier | en |
dc.subject | dual gain | en |
dc.subject | high energy astrophysics | en |
dc.subject | SOI pixel | en |
dc.subject | spectroscopic performance | en |
dc.subject | X-ray detector | en |
dc.title | A Silicon-on-Insulator-Based Dual-Gain Charge-Sensitive Pixel Detector for Low-Noise X-ray Imaging for Future Astronomical Satellite Missions | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.jtitle | Sensors | en |
dc.identifier.volume | 18 | - |
dc.identifier.issue | 6 | - |
dc.relation.doi | 10.3390/s18061789 | - |
dc.textversion | publisher | - |
dc.identifier.artnum | 1789 | - |
dc.identifier.pmid | 29865217 | - |
dcterms.accessRights | open access | - |
出現コレクション: | 学術雑誌掲載論文等 |
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