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dc.contributor.authorAsada, Satoshien
dc.contributor.authorSuda, Junen
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.alternative浅田, 聡志ja
dc.contributor.alternative須田, 淳ja
dc.contributor.alternative木本, 恒暢ja
dc.date.accessioned2019-02-01T01:58:55Z-
dc.date.available2019-02-01T01:58:55Z-
dc.date.issued2018-06-29-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/236134-
dc.description.abstractTemperature dependence of resistivity from 250 to 900 K in p-type 4H-SiC with various doping concentrations (5.8 × 10¹⁴-7.1 × 10¹⁸ cm⁻³) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From the experimental results, coefficients for a fitting formula with polynomial approximation were derived. We confirmed that the fitting formula can accurately estimate the resistivity of p-type SiC with wide-range doping concentrations.en
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherJapan Society of Applied Physicsen
dc.rights© 2018 The Japan Society of Applied Physics. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.titleAnalytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrationsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA12295836-
dc.identifier.jtitleJapanese Journal of Applied Physicsen
dc.identifier.volume57-
dc.identifier.issue8-
dc.relation.doi10.7567/JJAP.57.088002-
dc.textversionpublisher-
dc.identifier.artnum088002-
dc.addressDepartment of Electronic Science and Engineering, Kyoto Universityen
dc.addressDepartment of Electronic Science and Engineering, Kyoto Universityen
dc.addressDepartment of Electronic Science and Engineering, Kyoto Universityen
dc.relation.NAID150000116174-
dcterms.accessRightsopen access-
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