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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| JJAP.57.088002.pdf | 775.47 kB | Adobe PDF | 見る/開く |
完全メタデータレコード
| DCフィールド | 値 | 言語 |
|---|---|---|
| dc.contributor.author | Asada, Satoshi | en |
| dc.contributor.author | Suda, Jun | en |
| dc.contributor.author | Kimoto, Tsunenobu | en |
| dc.contributor.alternative | 浅田, 聡志 | ja |
| dc.contributor.alternative | 須田, 淳 | ja |
| dc.contributor.alternative | 木本, 恒暢 | ja |
| dc.date.accessioned | 2019-02-01T01:58:55Z | - |
| dc.date.available | 2019-02-01T01:58:55Z | - |
| dc.date.issued | 2018-06-29 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.uri | http://hdl.handle.net/2433/236134 | - |
| dc.description.abstract | Temperature dependence of resistivity from 250 to 900 K in p-type 4H-SiC with various doping concentrations (5.8 × 10¹⁴-7.1 × 10¹⁸ cm⁻³) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From the experimental results, coefficients for a fitting formula with polynomial approximation were derived. We confirmed that the fitting formula can accurately estimate the resistivity of p-type SiC with wide-range doping concentrations. | en |
| dc.format.mimetype | application/pdf | - |
| dc.language.iso | eng | - |
| dc.publisher | Japan Society of Applied Physics | en |
| dc.rights | © 2018 The Japan Society of Applied Physics. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. | en |
| dc.title | Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations | en |
| dc.type | journal article | - |
| dc.type.niitype | Journal Article | - |
| dc.identifier.ncid | AA12295836 | - |
| dc.identifier.jtitle | Japanese Journal of Applied Physics | en |
| dc.identifier.volume | 57 | - |
| dc.identifier.issue | 8 | - |
| dc.relation.doi | 10.7567/JJAP.57.088002 | - |
| dc.textversion | publisher | - |
| dc.identifier.artnum | 088002 | - |
| dc.address | Department of Electronic Science and Engineering, Kyoto University | en |
| dc.address | Department of Electronic Science and Engineering, Kyoto University | en |
| dc.address | Department of Electronic Science and Engineering, Kyoto University | en |
| dc.relation.NAID | 150000116174 | - |
| dcterms.accessRights | open access | - |
| 出現コレクション: | 学術雑誌掲載論文等 | |
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