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    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/24189
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dc.contributor.authorArmitage, Ren
dc.contributor.authorSuda, Jen
dc.contributor.authorKimoto, Ten
dc.date.accessioned2006-12-25T02:30:05Z-
dc.date.available2006-12-25T02:30:05Z-
dc.date.issued2006-01-02-
dc.identifier.citationR. Armitage et al., Appl. Phys. Lett. 88, 011908 (2006)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/24189-
dc.format.extent170127 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleEpitaxy of nonpolar AlN on 4H-SiC (1-100) substratesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleApplied Physics Lettersen
dc.identifier.volume88-
dc.identifier.issue1-
dc.relation.doi10.1063/1.2161809-
dc.textversionpublisher-
dc.identifier.artnum011908-
dc.relation.urlhttp://link.aip.org/link/?apl/88/011908-
dcterms.accessRightsopen access-
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