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DCフィールド | 値 | 言語 |
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dc.contributor.author | Inoue, Ryoichi | en |
dc.contributor.author | Takehara, Nagito | en |
dc.contributor.author | Naito, Takenori | en |
dc.contributor.author | Tanabe, Katsuaki | en |
dc.contributor.alternative | 井上, 諒一 | ja |
dc.contributor.alternative | 竹原, 凪人 | ja |
dc.contributor.alternative | 内藤, 壮勘 | ja |
dc.contributor.alternative | 田辺, 克明 | ja |
dc.date.accessioned | 2022-09-22T08:59:15Z | - |
dc.date.available | 2022-09-22T08:59:15Z | - |
dc.date.issued | 2019-06 | - |
dc.identifier.uri | http://hdl.handle.net/2433/276353 | - |
dc.description.abstract | We investigated semiconductor direct wafer bonding in a regular, non-cleanroom environment to understand environmental influences on bonding characteristics. The correlations among surface treatments, particle densities, bonding strengths, and interfacial conductivities were systematically investigated. On the basis of our investigation and condition optimization, we realized direct semiconductor bonding in the regular atmosphere with high interfacial mechanical stabilities and electrical conductivities, sufficient for device applications. Furthermore, we demonstrated fabrication and operation of solar cells using the developed bonding technique, with current paths across the bonded interfaces. These results and related technical insights may be useful for a low-cost, simpler manufacture of high-performance electrical and optical devices. | en |
dc.language.iso | eng | - |
dc.publisher | American Chemical Society (ACS) | en |
dc.rights | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright Copyright © 2019 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.9b00118. | en |
dc.rights | The full-text file will be made open to the public on 29 May 2020 in accordance with publisher's 'Terms and Conditions for Self-Archiving'. | en |
dc.rights | This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。 | en |
dc.subject | semiconductor | en |
dc.subject | wafer bonding surface | en |
dc.subject | interface | en |
dc.subject | electronics | en |
dc.subject | photonics | en |
dc.subject | device | en |
dc.title | Direct Semiconductor Wafer Bonding in Non-Cleanroom Environment: Understanding the Environmental Influences on Bonding | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.jtitle | ACS Applied Electronic Materials | en |
dc.identifier.volume | 1 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 936 | - |
dc.identifier.epage | 944 | - |
dc.relation.doi | 10.1021/acsaelm.9b00118 | - |
dc.textversion | author | - |
dcterms.accessRights | open access | - |
datacite.date.available | 2020-05-29 | - |
dc.identifier.eissn | 2637-6113 | - |
出現コレクション: | 学術雑誌掲載論文等 |

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