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Title: III-V Light-Emitting Diodes on Silicon by Hydrogel-Mediated Wafer Bonding
Authors: Nishigaya, Kosuke
Tanabe, Katsuaki
Author's alias: 西ヶ谷, 紘佑
田辺, 克明
Issue Date: Aug-2020
Publisher: The Electrochemical Society
IOP Publishing Ltd
Journal title: ECS Journal of Solid State Science and Technology
Volume: 9
Issue: 8
Thesis number: 086002
Abstract: Monolithic on-chip integration of III–V compound semiconductor light-source components particularly on Si platforms is thought to be an important key technology in modern optoelectronics. Hydrogel-mediated semiconductor wafer bonding is an emerging technique for heterogeneous materials integration, simultaneously forming interfaces with high mechanical stability, electrical conductivity, optical transparency, and surface-roughness tolerance [K. Kishibe and K. Tanabe, Appl. Phys. Lett., 115, 081601 (2019)]. So far, its experimental demonstration has been limited to homogeneous Si/Si bonding and an application of solar-cell device. Here we demonstrate the fabrication and operation of a III–V light-emitting diode on Si, via heterogeneous GaAs/Si hydrogel-mediated wafer bonding. The bonding process is carried out in ambient air at room temperature, and therefore can potentially provide significant cost and throughput advantages in device production. Bonding with an unpolished back surface of semiconductor wafer with a micrometer-scale roughness is realized thanks to the deformability of hydrogel. The luminescence characteristics of the bonded device on Si are measured comparable to an unbonded reference. Stable operations of the device at over 70 °C and for over 100 h are demonstrated. Our experimental results verify the further suitability of the hydrogel-mediated semiconductor bonding scheme for optoelectronic device applications.
Rights: This is the Accepted Manuscript version of an article accepted for publication in ECS Journal of Solid State Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1149/2162-8777/abb794.
The full-text file will be made open to the public on 21 September 2021 in accordance with publisher's 'Terms and Conditions for Self-Archiving'.
This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
URI: http://hdl.handle.net/2433/276354
DOI(Published Version): 10.1149/2162-8777/abb794
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