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JMEMS.2022.3213999.pdf1.52 MBAdobe PDF見る/開く
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dc.contributor.authorShimofuri, Masakien
dc.contributor.authorBanerjee, Amiten
dc.contributor.authorHirotani, Junen
dc.contributor.authorHirai, Yoshikazuen
dc.contributor.authorTsuchiya, Toshiyukien
dc.contributor.alternative霜降, 真希ja
dc.contributor.alternative廣谷, 潤ja
dc.contributor.alternative平井, 義和ja
dc.contributor.alternative土屋, 智由ja
dc.date.accessioned2023-02-06T08:00:00Z-
dc.date.available2023-02-06T08:00:00Z-
dc.date.issued2023-02-
dc.identifier.urihttp://hdl.handle.net/2433/279084-
dc.description.abstractNanogaps with a large working area and a precisely controlled separation of about 1 to 20 nm has important applications in nano photonics, thermal management, power generation, chemical sensing, etc. However, an effective method of fabricating such nanogaps has not yet been established. In addition, it has been necessary to evaluate the dependence of physical characteristics of nanogaps on the separation, but it has been technically and economically difficult to develop such a system. In this study, we developed a MEMS device, which can produce nanogaps with a large area and parallel smooth surfaces by the (111) plane cleavage of a single crystal silicon beam and can change and measure the separation of nanogaps. Using this device, nanogap fabrication by cleavage and separation control were uninterruptedly carried out while maintaining the cleanliness of the gap surfaces in vacuum; a nanogap with a large smooth surface area of 30 μ m² was successfully controlled in the range of 14 nm–1.5 μ m. For a small separation of less than 100 nm, the control resolution was sufficiently high at 1 nm. This method is fully compatible with conventional fabrication technologies for not only MEMS but also other semiconductor devices and should contribute to the fabrication of devices that exhibit useful quantum effects with only minor modifications. 2022-0073en
dc.language.isoeng-
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.rights© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.rightsThis is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。en
dc.subjectNanogapen
dc.subjectCasimir forceen
dc.subjectVan der Waals forceen
dc.subjectLifshitz forceen
dc.subjectthermophotovoltaic energy conversion (TPV)en
dc.subjectthermionic energy conversion (TIC)en
dc.subjectthermal nanotechnologyen
dc.titleNanometer Order Separation Control of Large Working Area Nanogap Created by Cleavage of Single-Crystal Silicon Along {111} Planes Using a MEMS Deviceen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJournal of Microelectromechanical Systemsen
dc.identifier.volume32-
dc.identifier.issue1-
dc.identifier.spage67-
dc.identifier.epage73-
dc.relation.doi10.1109/JMEMS.2022.3213999-
dc.textversionauthor-
dcterms.accessRightsopen access-
dc.identifier.pissn1057-7157-
dc.identifier.eissn1941-0158-
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