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Title: | Epitaxial Growth of Thick Single Crystalline Cubic Silicon Carbide by Sublimation Method |
Authors: | YOO, Woosik NISHINO, Shigehiro MATSUNAMI, Hiroyuki |
Issue Date: | 28-Feb-1987 |
Publisher: | Faculty of Engineering, Kyoto University |
Journal title: | Memoirs of the Faculty of Engineering, Kyoto University |
Volume: | 49 |
Issue: | 1 |
Start page: | 21 |
End page: | 31 |
Abstract: | The epitaxial growth of thick single crystalline cubic silicon carbide (3C-SiC) was carried out by the sublimation method on a CVD grown 3C-SiC (100) substrate for the first time. Polytypes of the grown layer were examined by photoluminescence measurement. Improvement of crystallinity with crystal growth was confirmed by X-ray rocking curve analysis and observation of surface morphologies turned out by molten KOH etching. |
URI: | http://hdl.handle.net/2433/281343 |
Appears in Collections: | Vol.49 Part 1 |

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