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Title: Epitaxial Growth of Thick Single Crystalline Cubic Silicon Carbide by Sublimation Method
Authors: YOO, Woosik
NISHINO, Shigehiro
MATSUNAMI, Hiroyuki
Issue Date: 28-Feb-1987
Publisher: Faculty of Engineering, Kyoto University
Journal title: Memoirs of the Faculty of Engineering, Kyoto University
Volume: 49
Issue: 1
Start page: 21
End page: 31
Abstract: The epitaxial growth of thick single crystalline cubic silicon carbide (3C-SiC) was carried out by the sublimation method on a CVD grown 3C-SiC (100) substrate for the first time. Polytypes of the grown layer were examined by photoluminescence measurement. Improvement of crystallinity with crystal growth was confirmed by X-ray rocking curve analysis and observation of surface morphologies turned out by molten KOH etching.
URI: http://hdl.handle.net/2433/281343
Appears in Collections:Vol.49 Part 1

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