Epitaxial Growth of β-SiC on α-SiC Substrates by Chemical Vapor Deposition

Abstract

Epitaxial growth of crystalline silicon carbide (SiC) on α-SiC substrates was carried out by chemical vapor deposition. β-SiC (3C-SiC) (111) can be epitaxially grown on a 15R-SiC (0001) substrate. The grown layers have far fewer DPBs (double positioning boundaries) than those on a 6H-SiC substrate. Successive etching of the grown layer revealed that the DPBs decreased as crystal growth proceeded. The decrease in DPBs was analyzed semi-quantitatively based on a model proposed by the authors, and the disappearance of DPBs was predicted. Schottky barrier diodes were fabricated on the grown layer and the electrical properties were investigated. The diode has a high breakdown voltage of 300V.