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タイトル: | Silicon-based 2 Terminal Tandem Solar Cells with Lattice-Matched Buffer Layers |
著者: | KOMATSU, Yuji FUYUKI, Takashi MATSUNAMI, Hiroyuki |
発行日: | 29-Jul-1994 |
出版者: | Faculty of Engineering, Kyoto University |
誌名: | Memoirs of the Faculty of Engineering, Kyoto University |
巻: | 56 |
号: | 3 |
開始ページ: | 97 |
終了ページ: | 116 |
抄録: | A novel structure for a Si-based 2-terminal tandem solar cell was proposed. The structure was optimized to get high efficiency considering the realistic material parameters. Gallium arsenide phosphide (GaAs₁₋xPx) and indium gallium phosphide (In₁₋xGaxP) were suggested as a top-cell material. A semi-empirical method was proposed to calculate the absorption coefficients of GaAs₁₋xPx and In₁₋xGaxP at any value of the composition x. The conversion efficiency of the cell was calculated by simulating its voltage-current characteristics. It was shown that an efficiency of 33.1% can be obtained for a GaAs.₇₃P.₂₇/Si cell and 34.2% for an In.₅₇Ga.₄₃P/Si cell. In₁₋xGaxP was shown to be more promising because of its larger absorption coefficient than GaAs₁₋xPx's. |
URI: | http://hdl.handle.net/2433/281493 |
出現コレクション: | Vol.56 Part 3 |
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