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dc.contributor.authorKitagawa, Saikien
dc.contributor.authorNakamura, Toshihiroen
dc.contributor.alternative北川, 彩貴ja
dc.contributor.alternative中村, 敏浩ja
dc.date.accessioned2023-12-28T05:01:29Z-
dc.date.available2023-12-28T05:01:29Z-
dc.date.issued2023-
dc.identifier.isbn9798350332469-
dc.identifier.urihttp://hdl.handle.net/2433/286506-
dc.description2023 IEEE International Magnetic Conference (INTERMAG), 15-19 May 2023, Sendai, Japanen
dc.description.abstractMn-doped indium tin oxide (ITO) films were deposited on single crystalline yttria stabilized zirconia (YSZ) substrates with (111) plane orientation and alkali-free glass substrates by rf magnetron sputtering. The epitaxial relationships between the Mn-doped ITO films and YSZ(111) substrates was confirmed by X-ray diffraction measurements. According to the X-ray rocking curve, the epitaxial Mn-doped ITO film on YSZ(111) substrate indicated the high degree of the crystalline alignment. The epitaxial and polycrystalline Mn-doped ITO films exhibited low resistivity and high transparency. Room-temperature ferromagnetism was observed in both the epitaxial and polycrystalline Mn-doped ITO films. The Curie temperature of these films was estimated to be higher than 400 K. The crystallinity difference between the epitaxial and polycrystalline films has little influence on the magnetic properties of the Mn-doped ITO films. The origin of the room-temperature ferromagnetism was discussed on the basis of the correlation between the magnetization and carrier concentration of the Mn-doped ITO films.en
dc.language.isoeng-
dc.publisherIEEEen
dc.rights© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.rightsThis is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。en
dc.subjectDiluted magnetic semiconductoren
dc.subjectEpitaxial growthen
dc.subjectMagnetic filmen
dc.subjectTransparent conducting filmen
dc.titleEffect of Crystallinity on Magnetic Properties in Manganese-Doped Indium Tin Oxide Filmsen
dc.typeconference paper-
dc.type.niitypeConference Paper-
dc.identifier.jtitle2023 IEEE International Magnetic Conference (INTERMAG)en
dc.identifier.spage1-
dc.identifier.epage5-
dc.relation.doi10.1109/intermag50591.2023.10265075-
dc.textversionauthor-
dcterms.accessRightsopen access-
datacite.awardNumber22H02120-
datacite.awardNumber23KJ1266-
datacite.awardNumber.urihttps://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22H02120/-
datacite.awardNumber.urihttps://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23KJ1266/-
jpcoar.funderName日本学術振興会ja
jpcoar.funderName日本学術振興会ja
jpcoar.awardTitle気液界面プラズマによる高効率炭素固定プロセスの開発と応用ja
jpcoar.awardTitle室温強磁性透明導電膜に対するスパッタ単結晶成長技術の開発と強磁性発現機構の解明ja
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