Prospects of mist CVD for fabrication of β-Ga₂O₃ MESFETs on β-Ga₂O₃ (010) substrates

Abstract

Mist CVD was applied to grow the β-Ga₂O₃ channel layer of a MESFET on a semi-insulating β-Ga₂O₃ (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm² V⁻¹ s⁻¹ and 6.2 × 10¹⁷ cm⁻³, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm⁻¹. The maximum transconductance was 46 mS mm⁻¹ and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future.