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dc.contributor.authorMikami, Kyotaen
dc.contributor.authorKaneko, Mitsuakien
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.alternative三上, 杏太ja
dc.contributor.alternative金子, 光顕ja
dc.contributor.alternative木本, 恒暢ja
dc.date.accessioned2025-04-03T07:26:03Z-
dc.date.available2025-04-03T07:26:03Z-
dc.date.issued2025-03-
dc.identifier.urihttp://hdl.handle.net/2433/293013-
dc.description.abstractDoping-dependent fixed charges were found in SiC/SiO₂ structures through a study on threshold voltage in both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with various body doping concentrations. Positive fixed charges increase for the p-body (n-channel) devices and negative fixed charges increase for the n-body (p-channel) devices, both of which retard the increase of threshold voltage in MOSFETs with increasing the body doping.en
dc.language.isoeng-
dc.publisherIOP Publishingen
dc.publisherThe Japan Society of Applied Physicsen
dc.rights© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltden
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/-
dc.titleDoping-dependent fixed charges in SiC/SiO₂ structureen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleApplied Physics Expressen
dc.identifier.volume18-
dc.identifier.issue3-
dc.relation.doi10.35848/1882-0786/adb539-
dc.textversionpublisher-
dc.identifier.artnum034002-
dcterms.accessRightsopen access-
dc.identifier.pissn1882-0778-
dc.identifier.eissn1882-0786-
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