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dc.contributor.authorChen, Yen
dc.contributor.authorKimoto, Ten
dc.contributor.authorTakeuchi, Yen
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:23:26Z-
dc.date.available2007-03-28T04:23:26Z-
dc.date.issued2002-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/2433/3297-
dc.language.isoeng-
dc.publisherELSEVIER SCIENCE BVen
dc.subjectcharacterizationen
dc.subjectmesa structuresen
dc.subjectchemical vapor deposition processesen
dc.subjectselective epitaxyen
dc.subjectsemiconducting silicon compoundsen
dc.titleSelective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substratesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF CRYSTAL GROWTHen
dc.identifier.volume237-
dc.identifier.spage1224-
dc.identifier.epage1229-
dc.relation.doi10.1016/S0022-0248(01)02176-5-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
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