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dc.contributor.authorDanno, Ken
dc.contributor.authorHashimoto, Ken
dc.contributor.authorSaitoh, Hen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:24:17Z-
dc.date.available2007-03-28T03:24:17Z-
dc.date.issued2004-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/3337-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectSiCen
dc.subjectepitaxial growthen
dc.subjecthigh purityen
dc.subjectdeep levelen
dc.subjectcarrier lifetimeen
dc.titleLow-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor depositionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen
dc.identifier.volume43-
dc.identifier.issue7B-
dc.identifier.spageL969-
dc.identifier.epageL971-
dc.relation.doi10.1143/JJAP.43.L969-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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