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dc.contributor.authorFujihira, Ken
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:18:57Z-
dc.date.available2007-03-28T04:18:57Z-
dc.date.issued2003-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/2433/3457-
dc.language.isoeng-
dc.publisherELSEVIER SCIENCE BVen
dc.subjectcharacterizationen
dc.subjectchemical vapor deposition processesen
dc.subjectvapor phase epitaxyen
dc.subjectsemiconducting silicon compoundsen
dc.titleGrowth and characterization of 4H-SiC in vertical hot-wall chemical vapor depositionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF CRYSTAL GROWTHen
dc.identifier.volume255-
dc.identifier.issue1-2-
dc.identifier.spage136-
dc.identifier.epage144-
dc.relation.doi10.1016/S0022-0248(03)01245-4-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
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