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dc.contributor.authorDanno, Ken
dc.contributor.authorKimoto, Ten
dc.date.accessioned2007-03-28T05:40:49Z-
dc.date.available2007-03-28T05:40:49Z-
dc.date.issued2006-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/35076-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectsilicon carbideen
dc.subjectdeep levelen
dc.subjecthole trapen
dc.subjectmidgapen
dc.subjectDLTSen
dc.titleHigh-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayersen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen
dc.identifier.volume45-
dc.identifier.issue8-11-
dc.identifier.spageL285-
dc.identifier.epageL287-
dc.relation.doi10.1143/JJAP.45.L285-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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