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dc.contributor.authorWada, Ken
dc.contributor.authorKimoto, Ten
dc.contributor.authorNishikawa, Ken
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T05:44:35Z-
dc.date.available2007-03-28T05:44:35Z-
dc.date.issued2006-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/2433/35352-
dc.language.isoeng-
dc.publisherELSEVIER SCIENCE BVen
dc.subjectcrystal morphologyen
dc.subjecthot wall epitaxyen
dc.subjectvapor-phase epitaxyen
dc.subjectsemiconducting materialsen
dc.titleEpitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor depositionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF CRYSTAL GROWTHen
dc.identifier.volume291-
dc.identifier.issue2-
dc.identifier.spage370-
dc.identifier.epage374-
dc.relation.doi10.1016/j.jcrysgro.2006.03.039-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
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