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dc.contributor.authorKimoto, Ten
dc.contributor.authorWada, Ken
dc.contributor.authorDanno, Ken
dc.date.accessioned2007-03-28T05:53:00Z-
dc.date.available2007-03-28T05:53:00Z-
dc.date.issued2006-
dc.identifier.issn0749-6036-
dc.identifier.urihttp://hdl.handle.net/2433/35963-
dc.language.isoeng-
dc.publisherACADEMIC PRESS LTD ELSEVIER SCIENCE LTDen
dc.subjectsilicon carbide (SiC)en
dc.subjectchemical vapor depositionen
dc.subjectsurface polarityen
dc.subjectdeep levelen
dc.subjectimpurity dopingen
dc.titleEpitaxial growth of 4H-SiC{0001} and reduction of deep levelsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSUPERLATTICES AND MICROSTRUCTURESen
dc.identifier.volume40-
dc.identifier.issue4-6-
dc.identifier.spage225-
dc.identifier.epage232-
dc.relation.doi10.1016/j.spmi.2006.06.021-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
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