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JApplPhys_97_124503.pdf338.87 kBAdobe PDF見る/開く
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dc.contributor.authorMiyazaki, Takashien
dc.contributor.authorKobayashi, Keien
dc.contributor.authorIshida, Kenjien
dc.contributor.authorHotta, Shuen
dc.contributor.authorHoriuchi, Toshikazuen
dc.contributor.authorMatsushige, Kazumien
dc.contributor.authorYamada, Hirofumien
dc.date.accessioned2007-08-22T05:36:32Z-
dc.date.available2007-08-22T05:36:32Z-
dc.date.issued2005-06-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/39714-
dc.description.abstractOrganic ultrathin transistors with a 3-μm-length channel were fabricated using dimethylquinquethiophene molecules. The local structures of the films and electric potential profiles across the channels were investigated by Kelvin probe force microscopy with the gate electrode grounded. We found that the local carrier mobility was much higher for the second-layer regions than for the monolayer regions from potential profiles measured while the gate electrode was electrically grounded. However, the macroscopic carrier mobility increased only slightly by increasing the number of molecular layers. One of the possible reasons for this contradiction was the large contact resistance at the source/channel interface, which was apparently observed in the potential profiles.en
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleIncrease in carrier mobility of organic ultrathin-film transistor with increasing molecular layers investigated by Kelvin probe force microscopyen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSen
dc.identifier.volume97-
dc.identifier.issue12-
dc.relation.doi10.1063/1.1937474-
dc.textversionpublisher-
dc.identifier.artnum124503-
dcterms.accessRightsopen access-
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