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dc.contributor.authorDanno, Katsunorien
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2007-08-22T05:36:34Z-
dc.date.available2007-08-22T05:36:34Z-
dc.date.issued2006-12-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/39722-
dc.description.abstractDeep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy(DLTS). The Z1/2 and EH6/7 centers are dominant in as-grown samples. After electron irradiation at 116 keV, by which only carbon atoms may be displaced, the Z1/2 and EH6/7 concentrations are significantly increased. The Z[1/2] and EH[6/7] centers are stable up to 1500–1600 °C and their concentrations are decreased by annealing at 1600–1700 °C. In the irradiated samples, the trap concentrations of the Z[1/2] and EH[6/7] centers are increased with the 0.7 power of the electron fluence. The concentrations of the Z[1/2] and EH[6/7] centers are very close to each other in all kinds of samples, as-grown, as-irradiated, and annealed ones, even though the condition of growth, irradiation (energy and fluence), and annealing has been changed. This result suggests that both Z[1/2] and EH[6/7] centers microscopically contain the same defect such as a carbonvacancy.en
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleInvestigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electronsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSen
dc.identifier.volume100-
dc.identifier.issue11-
dc.relation.doi10.1063/1.2401658-
dc.textversionpublisher-
dc.identifier.artnum113728-
dcterms.accessRightsopen access-
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