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RevSciInstrum_71_1036.pdf119.44 kBAdobe PDF見る/開く
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dc.contributor.authorIshikawa, Junzoen
dc.date.accessioned2007-06-14T06:23:56Z-
dc.date.available2007-06-14T06:23:56Z-
dc.date.issued2000-02-
dc.identifier.issn0034-6748-
dc.identifier.urihttp://hdl.handle.net/2433/39802-
dc.description.abstractApplications of heavy negative ions produced by sputter-type negative-ion sources for materials science are reviewed. Submilliampere and milliampere heavy-negative-ion beams can be produced by a neutral- and ionized-alkaline–metal-bombardment-type heavy-negative-ion source and rf plasma sputter-type negative-ion sources, respectively. These negative-ion beams can be applied for materials processing such as ion implantation, ion beam etching, and ion beam deposition. In negative-ion implantation the charge-up of implanted material surfaces is greatly reduced, and thus ion implantation without target charging is possible. The etching rate due to fluorine-negative ion is mainly determined by its kinetic energy. Pure diamondlike carbon films with high sp[3] structure have been prepared by C[−] and C_2[−]ion beam deposition, and CN films by CN[−]ion beam deposition. Negative ions provide an excellent tool for materials processing applications.en
dc.format.extent122310 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleApplications of heavy-negative-ion sources for materials science (invited)en
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleREVIEW OF SCIENTIFIC INSTRUMENTSen
dc.identifier.volume71-
dc.identifier.issue2-
dc.identifier.spage1036-
dc.identifier.epage1041-
dc.relation.doi10.1063/1.1150380-
dc.textversionpublisher-
dcterms.accessRightsopen access-
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