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dc.contributor.authorFujihira, Ken
dc.contributor.authorTamura, Sen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-06-14T06:23:03Z-
dc.date.available2007-06-14T06:23:03Z-
dc.date.issued2002-01-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/2433/39984-
dc.format.extent1338185 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen
dc.rights(c)2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en
dc.titleLow-loss, high-voltage 6H-SiC epitaxial p-i-n diodeen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEEE TRANSACTIONS ON ELECTRON DEVICESen
dc.identifier.volume49-
dc.identifier.issue1-
dc.identifier.spage150-
dc.identifier.epage154-
dc.relation.doi10.1109/16.974762-
dc.textversionpublisher-
dcterms.accessRightsopen access-
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