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dc.contributor.author | Osugi, Jiro | en |
dc.contributor.author | Namikawa, Ryosuke | en |
dc.contributor.author | Tanaka, Yoshiyuki | en |
dc.contributor.alternative | オオスギ, ジロウ | ja |
dc.contributor.alternative | ナミカワ, リョウスケ | ja |
dc.contributor.alternative | タナカ, ヨシユキ | ja |
dc.contributor.transcription | オオスギ, ジロウ | ja-Kana |
dc.contributor.transcription | ナミカワ, リョウスケ | ja-Kana |
dc.contributor.transcription | タナカ, ヨシユキ | ja-Kana |
dc.date.accessioned | 2007-09-10T06:45:13Z | - |
dc.date.available | 2007-09-10T06:45:13Z | - |
dc.date.issued | 1966-10-30 | - |
dc.identifier.issn | 0034-6675 | - |
dc.identifier.uri | http://hdl.handle.net/2433/46877 | - |
dc.description.abstract | Several kinds of new high pressure phases in the silicon-phosphorus system have been prepared by direct union of crystalline silicon and red phosphorus under the conditions of temperatures of 1100-1800℃ and pressures of 15-50kb. The high pressure equipments are the piston-cylinder of Bridgman type and the compact cubic anvil. The main reaction process in this system under high pressures has been presumed by means of X-ray diffraction. The effects of temperature, pressure, reaction time and the composition of the reactants on the main reaction process have been investigated. Among the new high pressure phases, a cubic pyrite type silicon diphosphide SiP_2 with a lattice constant of 5, 682 A and a cubic sphalerite (zinc-blende) type silicon monophosphide SiP with a lattice constant of 5.241 A are included. SiP_2 is prepared at 1100-1500℃ under 20-40 kb. SiP may be formed through the following reaction only above about l700℃ under pressure of 40-50kb ; SiP_2→SiP+P. It is one of the characteristics of the silicon-phosphorus system that the reaction is influenced rather sensitively not only by temperature and pressure but also by the composition of reactants and the reaction time. | en |
dc.language.iso | eng | - |
dc.publisher | The Physico-Chemical Society of Japan | en |
dc.title | Chemical reaction at high temperature and high pressure III : reaction of silicon and phosphorus at high temperature and high pressure | en |
dc.type | departmental bulletin paper | - |
dc.type.niitype | Departmental Bulletin Paper | - |
dc.identifier.ncid | AA00817661 | - |
dc.identifier.jtitle | The Review of Physical Chemistry of Japan | en |
dc.identifier.volume | 36 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 35 | - |
dc.identifier.epage | 43 | - |
dc.textversion | publisher | - |
dc.sortkey | 006 | - |
dcterms.accessRights | open access | - |
dc.identifier.pissn | 0034-6675 | - |
出現コレクション: | Vol.36 No.1 |
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